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Old 09-05-2005, 02:12 PM
Grant Stockly Grant Stockly is offline
Join Date: Jan 2005
Posts: 447

<Part of the previous post>

The ion beam approach works well. I have not used it recently on finer pitch ICs. With as-built feature sizes of 2-4u, it is fine. It will stop at the passivation and leave the Al bond wires intact. The resulting package looks like it has a V-shaped pit in it (which it does). The extent of the pit depends on the size of the die and if you want to blast down to the lead frame or substrate.

I have not done this on finer pitch devices. I would be a bit skeptical about these mostly because of the smaller bond pads. The etching would still stop at the passivation.

There are numerous places in Silicon Valley that do this on an outsource basis. Typical costs are about $75 per IC. I can get some contacts for you if you'd like.

gary g.
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